Zwitterionic Si-C-Si-P and Si-P-Si-P Four-Membered Rings with Two-Coordinate Phosphorus Atoms

Zwitterionic Si-C-Si-P and Si-P-Si-P four-membered rings with two-coordinate phosphorus atoms.

مشخصه‌یابی ‌ساختارهای دورآلائیده وارون p-Si/SiGe/Si با روشهای پرتو X و الکتریکی

In this work, the epitaxially grown, lattice–matched p-Si/Si1-xGex/Si inverted remote doped structures have been characterized using X-ray and electrical techniques. The Si cup layer thickness () and Ge content (x) have been determined from computer simulation of intensity and angular sepration of (004) peaks observed in the X-ray diffraction pattern due to misorientaion of corresponding Bragg ...

P-type SiGe/Si Superlattice Cooler

The fabrication and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 μm thick symmetrica...

Low Resistance Ohmic Contacts to p-Ge C on Si

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0:9983C0:0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10 5 cm2 to as low as 5:6 10 6 cm2. Theoretical calculations of the contact resistance of metals on ...

Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes.

In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthe...